High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate
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چکیده
منابع مشابه
Nitrogen-Polar (0001¯) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the Ga...
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The growth of high-quality indium ~In!-rich InXGa1 XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1 XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1 XN layers. Composition modulations were observed in the In-ri...
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2017
ISSN: 2159-3930
DOI: 10.1364/ome.7.003643